Dose-rate dependence of damage buildup in 3 C -SiC

Bayu Aji, L. B.; Li, T. T.; Wallace, J. B.; Kucheyev, S. O.

doi:10.1063/1.4986631

Title: Dose-rate dependence of damage buildup in 3 C -SiC

Journal Article · Tue Jun 20 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4986631· OSTI ID:1364450

;

; Wallace, J. B.; Kucheyev, S. O.

The influence of the defect generation rate on radiation damage processes in SiC remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to systematically study the dose-rate dependence of damage buildup in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. The results reveal a pronounced dose-rate effect, whose magnitude increases close-to-linearly with temperature. When ion dose and temperature are held constant, the dose-rate dependence of the damage level is nonlinear, with saturation at high dose rates. Electron microscopy reveals that the average size of stable defect clusters increases with increasing dose rate. These findings have important implications for understanding and predicting radiation damage in SiC.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1364450

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 121 Journal Issue: 23; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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References (31)

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