Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
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July 1991 |
Radiation damage in ge produced by noble gas ions investigated by the secondary electron emission method
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January 1975 |
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
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October 2015 |
Handbook of SiC properties for fuel performance modeling
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September 2007 |
Some new aspects for the evaluation of disorder profiles in silicon by backscattering
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January 1973 |
Atomic scale simulation of defect production in irradiated 3C-SiC
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September 2001 |
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
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May 2003 |
Irradiation-induced amorphization in β-SiC
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March 1998 |
New model for damage accumulation in Si during self‐ion irradiation
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December 1989 |
Role of nucleation layer morphology in determining the statistical roughness of CVD-grown thin films
- Babar, Shaista; Li, Tian T.; Abelson, John R.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 6
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November 2014 |
Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
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April 2016 |
Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
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October 2010 |
Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
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September 2001 |
Relation of neutron to ion damage annealing in Si and Ge
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January 1969 |
Effects of collision cascade density on radiation defect dynamics in 3C-SiC
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March 2017 |
SRIM – The stopping and range of ions in matter (2010)
- Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
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June 2010 |
Mechanism for the molecular effect in Si bombarded with clusters of light atoms
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February 2006 |
Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC
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April 2004 |
Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
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December 2003 |
Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
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August 2012 |
Damage buildup in GaN under ion bombardment
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September 2000 |
NIH Image to ImageJ: 25 years of image analysis
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June 2012 |
Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
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August 2016 |
Dose rate effects on damage accumulation in Si + ‐implanted gallium arsenide
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January 1991 |
Time constant of defect relaxation in ion-irradiated 3C-SiC
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May 2015 |
Influence of dose rate and temperature on the accumulation of Si‐implantation damage in indium phosphide
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April 1993 |
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
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February 2005 |
Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC
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January 2003 |
Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
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September 2015 |
Defect accumulation during room temperature N+ irradiation of silicon
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December 1996 |
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory
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December 2003 |