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Title: Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO 3 films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4752397· OSTI ID:1364265
 [1];  [2];  [3];  [4];  [5]
  1. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. of Physics and Inst. of Semiconductor Physics
  2. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. for Problems of Materials Science
  3. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. of Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Sciences and Technology Division
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire (LGD) theory. We calculated the phase diagrams in coordinates temperature - film thickness for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural order parameter (displacement vector of an appropriate oxygen atom from its cubic position) in the structural phase. For compressive misfit strains are stimulated because of the spontaneous in-plane structural order parameter. Furthermore, gradients of the structural order parameter components, which inevitably exist in the vicinity of film surfaces due to the termination and symmetry breaking, induce improper polarization and pyroelectric response via the flexoelectric and rotostriction coupling mechanism. Flexoelectric and rotostriction coupling results in the roto-flexoelectric field that is antisymmetric inside the film, small in the central part of the film, where the gradients of the structural parameter are small, and maximal near the surfaces, where the gradients of the structural parameter are highest. The field induces improper polarization and pyroelectric response. Penetration depths of the improper phases (both polar and structural) can reach several nm from the film surfaces. An improper pyroelectric response of thin films is high enough to be registered with planar-type electrode configurations by conventional pyroelectric methods.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1364265
Journal Information:
Journal of Applied Physics, Vol. 112, Issue 6; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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