Quantum Memristors with Superconducting Circuits
- Yale Univ., New Haven, CT (United States). Dept. of Physics; Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry; Aalto Univ., Otaniemi (Finland). QCD Labs, COMP Centre of Excellence, Dept. of Applied Physics
- Bavarian Academy of Sciences and Humanities, Garching (Germany). Walther-MeiBner-Inst.; Technische Univ. Munich (Germany). Physics Dept.; Nanosystems Initiative Munich (NIM), Munich (Germany)
- Univ. of California, San Diego, CA (United States). Dept. of Physics
- Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry
- Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry; Ikerbasque, Basque Foundation for Science, Bilbao (Spain)
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. Here in this paper, for realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
- Research Organization:
- Univ. of California, San Diego, CA (United States)
- Sponsoring Organization:
- USDOE; Finnish Cultural Foundation; Basque Government; European Union (EU)
- Grant/Contract Number:
- FG02-05ER46204; IT986-16; IS2015-69983-P
- OSTI ID:
- 1362034
- Journal Information:
- Scientific Reports, Vol. 7; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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