Shot noise detection in hBN-based tunnel junctions

Zhou, Panpan; Hardy, Will J.; Watanabe, Kenji; Taniguchi, Takashi; Natelson, Douglas

doi:10.1063/1.4978693

Title: Shot noise detection in hBN-based tunnel junctions

Journal Article · Mon Mar 27 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4978693· OSTI ID:1466026

Zhou, Panpan ^[1]; Hardy, Will J. ^[1]; Watanabe, Kenji ^[2]; Taniguchi, Takashi ^[2];

^[1]

Rice Univ., Houston, TX (United States)
National Institute for Materials Science, Ibaraki (Japan)

High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kX/lm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. Furthermore, these results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.

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Research Organization:: William Marsh Rice Univ., Houston, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-06ER46337

OSTI ID:: 1466026

Alternate ID(s):: OSTI ID: 1361788

Journal Information:: Applied Physics Letters, Vol. 110, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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Tunneling noise and defects in exfoliated hexagonal boron nitride Zhao, Xuanhan; Zhou, Panpan; Chen, Liyang AIP Advances, Vol. 9, Issue 10 https://doi.org/10.1063/1.5126129	journal	October 2019
Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji Physical Review B, Vol. 97, Issue 4 https://doi.org/10.1103/physrevb.97.045425	journal	January 2018
Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement Hattori, Y.; Taniguchi, T.; Watanabe, K. arXiv https://doi.org/10.48550/arxiv.1801.08727	text	January 2018

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