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Title: Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.4977205· OSTI ID:1361785
 [1];  [1]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
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Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1361785
Alternate ID(s):
OSTI ID: 1352920; OSTI ID: 1420716
Journal Information:
APL Materials, Journal Name: APL Materials Vol. 5 Journal Issue: 4; ISSN 2166-532X
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

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