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Structure and electronic states on reduced SrTiO{sub 3}(110) surface observed by scanning tunneling microscopy and spectroscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.588227· OSTI ID:136151
; ;  [1]
  1. Electrotechnical Lab., Ibaraki (Japan); and others
The SrTiO{sub 3}(110) surface, after annealing in ultrahigh vacuum (UHV) was observed by scanning tunneling microscopy/spectroscopy (STM/S). These observations were compared with the ultraviolet photoemission spectroscopy (UPS) and x-ray photoemission spectroscopy (XPS) data previously reported. The surface, after annealing at 800{degrees}C, is dominated by flat regions where tunneling spectra are of metallic character, in agreement with the UPS data that showed a clear cutoff at the Fermi energy, E{sub F}. After annealing above 1000{degrees}C, step edges along [1{bar 1}0] and rowlike structure along [001] with spacing {approximately}2.2 nm, close to 4{radical}2a, are observed. The tunneling spectra showed an energy gap and an in-gap state {approximately}1 eV below E{sub F}, both of which are similar to those reported on the SrTiO{sub 3}(100) surface after annealing in UHV. After 20 cycles of annealing above 1000{degrees}C, a new ordering with c(2x6) periodicity is observed on the terraces. The STM/S results are explained by formation of (100) and (010) microfacets in the course of annealing in vacuum. 11 refs., 9 figs.
OSTI ID:
136151
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 13; ISSN JVTBD9; ISSN 0734-211X
Country of Publication:
United States
Language:
English