Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Lu, T. M.; Tracy, L. A.; Laroche, D.; Huang, S. -H.; Chuang, Y.; Su, Y. -H.; Li, J. -Y.; Liu, C. W.

doi:10.1038/s41598-017-02757-2

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Journal Article · Thu Jun 01 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-02757-2· OSTI ID:1360929

^[1]; Tracy, L. A. ^[1]; Laroche, D. ^[1]; Huang, S. -H. ^[2]; Chuang, Y. ^[2]; Su, Y. -H. ^[2]; Li, J. -Y. ^[2]; Liu, C. W. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan). Dept. of Electrical Engineering and Graduate Inst. of Electronic Engineering; National Nano Device Laboratories, Hsinchu (Taiwan)

We typically achieve Quantum Hall ferromagnetic transitions by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We also show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10¹⁰ cm^-2, this ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. For such gate-controlled spin-polarizations in the quantum Hall regime the door opens in order to realize Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1360929

Report Number(s):: SAND2017--5485J; PII: 2757

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Charge and spin textures of Ising quantum Hall ferromagnet domain walls Danon, Jeroen; Balram, Ajit C.; Sánchez, Samuel arXiv https://doi.org/10.48550/arxiv.1909.13249	text	January 2019

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