Antimony diffusion in CdTe

Journal Article · Tue Feb 07 23:00:00 EST 2017 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2017.2655033· OSTI ID:1360893

Colegrove, Eric ^[1]; Harvey, Steven P. ^[1]; Yang, Ji -Hui ^[1]; Burst, James M. ^[1]; Duenow, Joel N. ^[1]; Albin, David S. ^[1]; Wei, Su -Huai ^[2]; Metzger, Wyatt K. ^[1]

---

1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
2. Beijing Computational Science Research Center, Beijing (China)

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1360893
• Report Number(s): NREL/JA--5K00-65802
• Journal Information: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 3 Vol. 7; ISSN 2156-3381
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
II-VI semiconductor materials
antimony
density functional theory
diffusion processes
grain boundaries