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Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels

Journal Article · · Nano Letters
 [1];  [2];  [2];  [2];  [3]
  1. Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
  3. Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering and Materials Science and Engineering Program and Dept. of NanoEngineering
+ Show Author Affiliations
In the alloyed and compound contacts between metal and semiconductor transistor channels we see that they enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. We report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. Here, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
OSTI ID:
1357020
Alternate ID(s):
OSTI ID: 1361650
Report Number(s):
SAND--2016-9942J; SAND2017--2000J; 651278
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 4 Vol. 17; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Methods for Calibration of Specimen Temperature During In Situ Transmission Electron Microscopy Experiments journal January 2020
Revisiting Metal Electrodeposition in Porous Anodic Alumina: Toward Tailored Preparation of Metal Nanotube Arrays journal January 2018

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Related Subjects

36 MATERIALS SCIENCE
In situ TEM
InGaAs
amorphization
nanowire
nickelide
recrystallization