Correlating thermoelectric properties with microstructure in Bi 0.8 Sb 0.2 thin films

Siegal, M. P.; Lima-Sharma, A. L.; Sharma, P. A.; Rochford, C.

doi:10.1063/1.4979785

Correlating thermoelectric properties with microstructure in Bi _0.8 Sb _0.2 thin films

Journal Article · Mon Apr 03 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4979785· OSTI ID:1357018

Siegal, M. P. ^[1]; Lima-Sharma, A. L. ^[1]; Sharma, P. A. ^[1]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The room temperature electronic transport properties of 100 nm-thick thermoelectric Bi_0.8Sb_0.2 films, sputter-deposited onto quartz substrates and post-annealed in an ex-situ furnace, systematically correlate with the overall microstructural quality, improving with increasing annealing temperature until close to the melting point for the alloy composition. Furthermore, the optimized films have high crystalline quality with ~99% of the grains oriented with the trigonal axis perpendicular to the substrate surface. Film resistivities and Seebeck coefficients are accurately measured by preventing deleterious surface oxide formation via a SiN capping layer and using Nd-doped Al for contacts. Our resulting values are similar to single crystals and significantly better than previous reports from films and polycrystalline bulk alloys.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1357018

Report Number(s):: SAND2017--0986J; 650830

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 110; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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