Photoexcited Carrier Dynamics of In 2 S 3 Thin Films
Indium sulfide (In2S3) is a promising absorber base for substitutionally-doped intermediate band photovoltaics (IBPV). However, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. In this letter, the kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition (ALD) are deduced from photoconductivity, photoluminescence (PL), and transient absorption (TA) spectroscopy. We develop a map of excited state dynamics for polycrystalline thin films including a secondary conduction band ~2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (~100 ns) transients. Band edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (< 30 ps) and deep defect levels on IBPV employing In2S3-based absorbers is finally considered.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1356993
- Journal Information:
- Journal of Physical Chemistry Letters, Vol. 6, Issue 13; ISSN 1948-7185
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
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