Wavelength-Dependent Ultrafast Charge Carrier Separation in the WO 3 /BiVO 4 Coupled System
Due to its ~2.4 eV band gap, BiVO4 is a very promising photoanode material for harvesting the blue portion of the solar light for photoelectrochemical (PEC) water splitting applications. In WO3/BiVO4 heterojunction films, the electrons photoexcited in BiVO4 are injected into WO3, overcoming the lower charge carriers’ diffusion properties limiting the PEC performance of BiVO4 photoanodes. Here, we investigate by ultrafast transient absorption spectroscopy the charge carrier interactions occurring at the interface between the two oxides in heterojunction systems to directly unveil their wavelength dependence. Under selective BiVO4 excitation, a favorable electron transfer from photoexcited BiVO4 to WO3 occurs immediately after excitation and leads to an increase of the trapped holes’ lifetime in BiVO4. However, a recombination channel opens when both oxides are simultaneously excited, evidenced by a shorter lifetime of trapped holes in BiVO4. As a result, PEC measurements reveal the implication of these wavelength-dependent ultrafast interactions on the performances of the WO3/BiVO4 heterojunction.
- Research Organization:
- University of Notre Dame, IN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- FC02-04ER15533
- OSTI ID:
- 1356719
- Alternate ID(s):
- OSTI ID: 1372220
- Journal Information:
- ACS Energy Letters, Journal Name: ACS Energy Letters; ISSN 2380-8195
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Temperature Effect on Photoelectrochemical Water Splitting: A Model Study Based on BiVO4 Photoanodes
Enhancing interfacial charge transfer in a WO3/BiVO4 photoanode heterojunction through gallium and tungsten co-doping and a sulfur modified Bi2O3 interfacial layer