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Title: Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [3];  [2];  [1]
  1. IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
  2. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1355948
Grant/Contract Number:  
EE0006334
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, and Haight, Richard. Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics. United States: N. p., 2017. Web. doi:10.1063/1.4982906.
Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, & Haight, Richard. Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics. United States. doi:10.1063/1.4982906.
Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, and Haight, Richard. Sun . "Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics". United States. doi:10.1063/1.4982906.
@article{osti_1355948,
title = {Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics},
author = {Gershon, Talia and Gunawan, Oki and Gokmen, Tayfun and Brew, Kevin W. and Singh, Saurabh and Hopstaken, Marinus and Poindexter, Jeremy R. and Barnard, Edward S. and Buonassisi, Tonio and Haight, Richard},
abstractNote = {},
doi = {10.1063/1.4982906},
journal = {Journal of Applied Physics},
number = 17,
volume = 121,
place = {United States},
year = {Sun May 07 00:00:00 EDT 2017},
month = {Sun May 07 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4982906

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Works referenced in this record:

Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
journal, November 2013

  • Wang, Wei; Winkler, Mark T.; Gunawan, Oki
  • Advanced Energy Materials, Vol. 4, Issue 7, Article No. 1301465
  • DOI: 10.1002/aenm.201301465

Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics
journal, March 2016

  • Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C.
  • The Journal of Chemical Physics, Vol. 144, Issue 10, Article No. 104704
  • DOI: 10.1063/1.4943270

Synthesis and Characterization of Nanostructured Stannite Cu2ZnSnSe4 and Ag2ZnSnSe4 for Thermoelectric Applications
journal, April 2015

  • Wei, Kaya; Nolas, George S.
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 18, p. 9752-9757
  • DOI: 10.1021/acsami.5b01617

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1-x)2 ZnSnSe4
journal, March 2016

  • Gershon, Talia; Lee, Yun Seog; Antunez, Priscilla
  • Advanced Energy Materials, Vol. 6, Issue 10, Article No. 1502468
  • DOI: 10.1002/aenm.201502468