Defects in laser crystals of rare-earth aluminum and gallium garnets
Journal Article
·
· Inorganic Materials
OSTI ID:135590
- Physicotechnical Institute, Izhevsk (Russian Federation)
Using thermodynamic and crystallochemical analysis of garnets R{sub 3}Ga{sub 5}O{sub 12}(R=Sm - Lu, Y) and R{sub 3}Al{sub 5}O{sub 12} (R = Gd - Lu, Y) and their solid solutions, we characterized point defects present in their structure and, for the first time, estimated their contents. We showed that the garnets under consideration contain cationic defects and oxygen vacancies: (1) In aluminum garnets R{sub 3}Al{sub 5}O{sub 12}, improper-valence ions form at octahedral sites. (2) In gallium garnets R{sub 3}Ga{sub 5}O{sub 12} and Ga-containing solid solutions, there are Ga vacancies at octahedral sites. (3) In Dy{sub 3}(Ga{sub c}Al{sub 1-c}){sub 5}O{sub 12} solid solutions, in addition to the above-mentioned defects typical of gallium garnets, antistructural, substitutional defects (Ga{sup 3+}{sub IV}) are present. The Ga{sup 3+}ions occupy preferentially octahedra; that is, they exhibit a higher affinity for octahedral coordination than Alk{sup 3+} ions, in agreement with Goldschmidt`s crystallochemical approach. The refined solid-solution ranges for R{sub 3}Ga{sub c}Al{sub 1-c}{sub 5}O{sub 12}(R=Nd,Sm,Eu,Gd) are 0.75 {le}c{le} 1 for Nd, 0.5 {le}c{le} 1 for Sm, 0.4 {le}c{le} 1 for Eu, and 0.25 {le}c{le} 1 for Gd.
- OSTI ID:
- 135590
- Journal Information:
- Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 12 Vol. 30; ISSN INOMAF; ISSN 0020-1685
- Country of Publication:
- United States
- Language:
- English
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