Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction

D'Aquila, Kenneth; Phatak, Charudatta; Holt, Martin V.; Stripe, Benjamin D.; Tong, Sheng; Park, Woon Ik; Hong, Seungbum; Petford-Long, Amanda K.

doi:10.1063/1.4883398

Title: Bipolar resistance switching in Pt/CuO _x /Pt via local electrochemical reduction

Journal Article · Tue Jun 17 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883398· OSTI ID:1355782

D'Aquila, Kenneth ^[1]; Phatak, Charudatta ^[2]; Holt, Martin V. ^[3]; Stripe, Benjamin D. ^[3]; Tong, Sheng ^[3]; Park, Woon Ik ^[2]; Hong, Seungbum ^[2]; Petford-Long, Amanda K. ^[1]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Lab. (ANL), Argonne, IL (United States). Nanoscience and Technology Division

We investigated the local changes in copper oxidation state and the corresponding resistance changes in Pt/CuO_x/Pt nanoscale heterostructures using x-ray nanoprobe spectro-microscopy and current-voltage characterization. After gentle electroforming, during which the current-voltage behavior remains non-linear, the low resistance state was reached, and we also observed regions of 160 nm width that show an increase in Cu K-alpha fluorescence intensity, indicative of partial reduction of the CuO_x. Analysis of the current voltage curves showed that the dominant conduction mechanism is Schottky emission and that the resistance state is correlated with the Schottky barrier height. We also propose that the reversible resistivity change in these Pt/CuO_x/Pt heterostructures occurs through local electrochemical reduction leading to change of the Schottky barrier height at the interface between Pt and the reduced CuO_x layers and to change of the CuO_x resistivity within laterally confined portions of the CuO_x layer. Our experiments reveal important insights into the mechanism of resistance switching of Pt/CuO_x/Pt performed in a current and voltage regime that does not create a metallic conduction path.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1355782

Journal Information:: Applied Physics Letters, Vol. 104, Issue 24; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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