Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO 2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
Journal Article
·
· Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1354355
- Report Number(s):
- BNL-112871-2016-JA
- Journal Information:
- Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics, Vol. 32, Issue 3; ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIP
- Country of Publication:
- United States
- Language:
- English
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