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Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4945323· OSTI ID:1354308
Here, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr2S3) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr2S3 near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7–15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr2S3 based applications under extreme conditions.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI ID:
1354308
Report Number(s):
BNL--112824-2016-JA
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 119; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

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Cited By (2)

Phonons, Phase Transitions and Thermal Expansion in LiAlO2: An ab-initio Density Functional Study text January 2018
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