Domain wall and interphase boundary motion in (1–x)Bi(Mg0.5Ti0.5)O3–xPbTiO3 near the morphotropic phase boundary
Journal Article
·
· Journal of Applied Physics
- Univ. of Florida, Gainesville, FL (United States)
- Univ. of Science and Technology Beijing (China)
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of Florida, Gainesville, FL (United States); North Carolina State Univ., Raleigh, NC (United States)
In this work, electric field-induced changes in the domain wall motion of (1-x)Bi(Mg0.5Ti0.5)O3–xPbTiO3 (BMT-xPT) near the morphotropic phase boundary (MPB) where x = 0.37 (BMT-37PT) and x =0.38 (BMT-38PT), are studied by means of synchrotron x-ray diffraction. Through Rietveld analysis and profile fitting, a mixture of coexisting monoclinic (Cm) and tetragonal (P4mm) phases is identified at room temperature. Extrinsic contributions to the property coefficients are evident from electric-field-induced domain wall motion in both the tetragonal and monoclinic phases, as well as through the interphase boundary motion between the two phases. Domain wall motion in the tetragonal and monoclinic phases for BMT-37PT is larger than that of BMT-38PT, possibly due to this composition's closer proximity to the MPB. Increased interphase boundary motion was also observed in BMT-37PT. Lattice strain, which is a function of both intrinsic piezoelectric strain and elastic interactions of the grains (the latter originating from domain wall and interphase boundary motion), is similar for the respective tetragonal and monoclinic phases.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- National Natural Science Foundation of China (NSFC); National Science Foundation (NSF); US Army; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1353230
- Alternate ID(s):
- OSTI ID: 22597779
OSTI ID: 1273669
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- ENGLISH
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