Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Tzeng, Yan-Kai; Zhang, Jingyuan Linda; Lu, Haiyu; Ishiwata, Hitoshi; Dahl, Jeremy; Carlson, Robert M.  K.; Yan, Hao; Schreiner, Peter R.; Vučković, Jelena; Shen, Zhi-Xun; Melosh, Nicholas; Chu, Steven

doi:10.1021/acs.nanolett.6b04543

Title: Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Journal Article · Thu Feb 09 00:00:00 EST 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b04543· OSTI ID:1353196

^[1]; Zhang, Jingyuan Linda ^[2]; Lu, Haiyu ^[3]; Ishiwata, Hitoshi ^[4]; Dahl, Jeremy ^[4]; Carlson, Robert M. K. ^[4]; Yan, Hao ^[4]; Schreiner, Peter R. ^[5]; Vučković, Jelena ^[2]; Shen, Zhi-Xun ^[6]; Melosh, Nicholas ^[4]; Chu, Steven ^[7]

Stanford Univ., CA (United States). Dept. of Physics
Stanford Univ., CA (United States). E. L. Ginzton Lab.
Stanford Univ., CA (United States). Dept. of Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Justus-Liebig Univ., Giessen (Germany). Inst. of Organic Chemistry
Stanford Univ., CA (United States). Dept. of Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Stanford Univ., CA (United States). Dept. of Physics; Stanford Univ., CA (United States). Dept. of Molecular and Cellular Physiology

Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. Finally, this variation allowed rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; Moore Foundation

Grant/Contract Number:: AC02-76SF00515; 4309

OSTI ID:: 1353196

Journal Information:: Nano Letters, Vol. 17, Issue 3; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 49 works

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Title: Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

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