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Title: Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Journal Article · · Journal of Instrumentation
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  1. Univ. of Oxford, Oxford (United Kingdom); Univ. of Glasgow, Glasgow (United Kingdom)
  2. Univ. of Liverpool, Liverpool (United Kingdom)
  3. Univ. of Oxford, Oxford (United Kingdom)
  4. Univ. of Glasgow, Glasgow (United Kingdom)
  5. Univ. of Geneva, Geneva (Switzerland)
  6. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  8. Rutherford Appleton Lab., Didcot (United Kingdom)
  9. Karlsruhe Institute of Technology, Karlsruhe (Germany)
  10. Univ. of California, Santa Cruz, CA (United States)
  11. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  12. Jozef Stefan Institute, Ljubljana (Slovenia)
  13. Univ. of New Mexico, Albuquerque, NM (United States)
  14. Cambridge Univ., Cambridge (United Kingdom)
  15. Univ. of Oxford, Oxford (United Kingdom); Rutherford Appleton Lab., Didcot (United Kingdom)
  16. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Geneva, Geneva (Switzerland)
  17. Jozef Stefan Institute, Ljubljana (Slovenia); Univ. of Ljubljana, Ljubljana (Slovenia)
  18. Univ. of Lancaster, Lancaster (United Kingdom)
  19. Institute of High Energy Physics, Beijing (People's Republic of China)
  20. Argonne National Lab. (ANL), Argonne, IL (United States)
  21. Univ. College London, London (United Kingdom)
+ Show Author Affiliations

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e– to 386 e– and from 75 e– to 277 e– for the corresponding pixels.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1353115
Journal Information:
Journal of Instrumentation, Vol. 12, Issue 02; ISSN 1748-0221
Publisher:
Institute of Physics (IOP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

References (13)

Silicon tracking detectors in high-energy physics journal February 2012
A history of hybrid pixel detectors, from high energy physics to medical imaging journal May 2014
CMOS monolithic active pixel sensors for high energy physics journal November 2014
The Belle II DEPFET pixel detector journal September 2016
The MAPS-based vertex detector for the STAR experiment: Lessons learned and performance journal September 2016
Semiconductor Detector Systems book August 2005
Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer
  • Senyukov, S.; Baudot, J.; Besson, A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 730 https://doi.org/10.1016/j.nima.2013.03.017
journal December 2013
HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results journal March 2015
Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade
  • Fadeyev, V.; Galloway, Z.; Grabas, H.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831 https://doi.org/10.1016/j.nima.2016.05.092
journal September 2016
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
  • Snoeys, W.; Faccio, F.; Burns, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 439, Issue 2-3 https://doi.org/10.1016/S0168-9002(99)00899-2
journal January 2000
The beta ray spectrum and the average beta energy of several isotopes of interest in medicine and biology journal September 1972
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
  • Lindström, G.; Ahmed, M.; Albergo, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 466, Issue 2 https://doi.org/10.1016/S0168-9002(01)00560-5
journal July 2001
Charge collection studies in irradiated HV-CMOS particle detectors journal April 2016

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