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Electric Field Effects on the Hidden Order of Microstructured URu2Si2

Technical Report ·
DOI:https://doi.org/10.2172/1351216· OSTI ID:1351216
 [1];  [1];  [1];  [2];  [3];  [4];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Max Planck Society, Dresden (Germany)
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  4. Cornell Univ., Ithaca, NY (United States)
+ Show Author Affiliations
Despite being studied for over 30 years there is still continual interest in they heavy-fermion URu2Si2 due largely in part to the still disagreed upon origin of the so-called hidden-order (HO) state that arises below THO = 17.5 K. While both the application of pressure and high magnetic fields have been shown to suppress the HO state, one mechanism that has yet to be explored is the application of an electric field, most likely due to the difficulty of measuring such an effect in a metal. To overcome this challenge we have used focused ion beam (FIB) lithography to obtain the necessary sample geometry to create an electric field across a small section of the sample by applying a voltage. Our results suggest that at low temperatures the application of an electric field is able to suppress the hidden order state.
Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-06NA25396
OSTI ID:
1351216
Report Number(s):
LA--UR-17-22416
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
High Magnetic Field Science