Structure and magnetism of Fe-doped BaSnO3 thin films
[1];
[2];
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Applied Physics, Stanford University, Stanford, California 94305, USA
BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. Here in this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of ~2×10-3 mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O2, the films are paramagnetic. Finally, the existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)
- Grant/Contract Number:
- AC02-05CH11231; W911NF-14-1-0611
- OSTI ID:
- 1349373
- Alternate ID(s):
- OSTI ID: 1408430; OSTI ID: 1421278
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Vol. 7 Journal Issue: 5; ISSN 2158-3226
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Oxygen vacancy mediated conductivity and charge transport properties of epitaxial Ba 0.6 La 0.4 TiO 3− δ thin films
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journal | May 2019 |
Epitaxial Co doped BaSnO3 thin films with tunable optical bandgap on MgO substrate
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journal | February 2019 |
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