Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Norman, Andrew G.; Guthrey, Harvey L.; Geisz, John F.

doi:10.1016/j.jcrysgro.2016.11.050

Title: Reduced dislocation density in Ga_xIn_1–xP compositionally graded buffer layers through engineered glide plane switch

Journal Article · Thu Nov 17 00:00:00 EST 2016 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2016.11.050· OSTI ID:1348155

Schulte, Kevin L. ^[1]; France, Ryan M. ^[1]; McMahon, William E. ^[1]; Norman, Andrew G. ^[1]; Guthrey, Harvey L. ^[1]; Geisz, John F. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

In this work we develop control over dislocation glide dynamics in Ga_xIn_1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga_xIn_1-xP CGBs. When ordered Ga_xIn_1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga_xIn_1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga_xIn_1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1348155

Alternate ID(s):: OSTI ID: 1396709

Report Number(s):: NREL/JA-5J00-67043

Journal Information:: Journal of Crystal Growth, Vol. 464, Issue C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction Shida, K.; Takeuchi, S.; Tohei, T. Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5011291	journal	January 2018

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Title: Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

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Title: Reduced dislocation density in Ga_xIn_1–xP compositionally graded buffer layers through engineered glide plane switch