Vertical III-nitride thin-film power diode
Patent
·
OSTI ID:1346948
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation
- Patent Number(s):
- 9,595,616
- Application Number:
- 14/957,012
- OSTI ID:
- 1346948
- Resource Relation:
- Patent File Date: 2015 Dec 02
- Country of Publication:
- United States
- Language:
- English
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