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Utilizing Electrical Characteristics of Individual Nanotube Devices to Study the Charge Transfer between CdSe Quantum Dots and Double-Walled Nanotubes

Journal Article · · ACS Energy Letters
To study the charge transfer between cadmium selenide (CdSe) quantum dots (QDs) and double-walled nanotubes (DWNTs), various sizes of CdSe-ligand-DWNT structures are synthesized, and field-effect transistors (FETs) from individual functionalized DWNTs rather than networks of the same are fabricated. From the electrical measurements, two distinct electron transfer mechanisms from the QD system to the nanotube are identified. By the formation of the CdSe-ligand-DWNT heterostructure, an effectively n-doped nanotube is created due to the smaller work function of CdSe as compared with the nanotube. In addition, once the QD-DWNT system is exposed to laser light, further electron transfer from the QD through the ligand, i.e. 4-mercaptophenol (MTH), to the nanotube occurs and a clear QD-size dependent tunneling process is observed. Furthermore, the detailed analysis of a large set of devices and the particular methodology employed here for the first time allowed for extracting a wavelength and quantum dot size dependent charge transfer efficiency – a quantity that is evaluated for the first time through electrical measurement.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Purdue Univ., West Lafayette, IN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-98CH10886; SC0012704
OSTI ID:
1345476
Alternate ID(s):
OSTI ID: 1348295
Report Number(s):
BNL--113682-2017-JA
Journal Information:
ACS Energy Letters, Journal Name: ACS Energy Letters Journal Issue: 3 Vol. 2; ISSN 2380-8195
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Phototransistors with Negative or Ambipolar Photoresponse Based on As-Grown Heterostructures of Single-Walled Carbon Nanotube and MoS 2 journal August 2018
Metal chalcogenide quantum dot-sensitized 1D-based semiconducting heterostructures for optical-related applications journal January 2019

Figures / Tables (11)