Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates
Journal Article
·
· Chemistry of Materials
- National Univ. of Singapore (Singapore)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Chinese Academy of Sciences, Beijing (China)
Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap transition at the single atomic sheet state as well as optically accessible spin degree of freedom in valleytronics.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1344284
- Journal Information:
- Chemistry of Materials, Vol. 28, Issue 20; ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 51 works
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