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Title: Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates

Journal Article · · Chemistry of Materials
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  1. National Univ. of Singapore (Singapore)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Chinese Academy of Sciences, Beijing (China)

Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap transition at the single atomic sheet state as well as optically accessible spin degree of freedom in valleytronics.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1344284
Journal Information:
Chemistry of Materials, Vol. 28, Issue 20; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 51 works
Citation information provided by
Web of Science

References (19)

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets journal April 2013
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal November 2012
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics journal October 2014
Scalable Production of a Few-Layer MoS 2 /WS 2 Vertical Heterojunction Array and Its Application for Photodetectors journal December 2015
Light-emitting diodes by band-structure engineering in van der Waals heterostructures journal February 2015
Vertical and in-plane heterostructures from WS2/MoS2 monolayers journal September 2014
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions journal September 2014
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors journal August 2014
Lateral Growth of Composition Graded Atomic Layer MoS 2(1– x ) Se 2 x Nanosheets journal April 2015
Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties journal February 2014
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface journal July 2015
Chemical Vapor Deposition of Large-Sized Hexagonal WSe 2 Crystals on Dielectric Substrates journal September 2015
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe 2 journal February 2015
Large-Area Synthesis of Highly Crystalline WSe 2 Monolayers and Device Applications journal December 2013
Three-fold rotational defects in two-dimensional transition metal dichalcogenides journal April 2015
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide journal May 2013
Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS 2 Monolayer from Chemical Vapor Deposition journal December 2013
Controlled Growth of High-Quality Monolayer WS 2 Layers on Sapphire and Imaging Its Grain Boundary journal September 2013
High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts journal May 2014

Cited By (19)

Controllable one-step growth of bilayer MoS 2 –WS 2 /WS 2 heterostructures by chemical vapor deposition journal September 2018
Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions journal December 2017
Electronic Transport and Thermopower in 2D and 3D Heterostructures—A Theory Perspective journal June 2019
Epitaxial growth of hybrid nanostructures journal January 2018
General synthesis of two-dimensional van der Waals heterostructure arrays journal March 2020
Selective Oxidation of WS 2 Defect Domain with Sub‐Monolayer Thickness Leads to Multifold Enhancement in Photoluminescence journal August 2019
Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials journal July 2017
P-GaSe/N-MoS 2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation journal January 2018
NaCl-assisted one-step growth of MoS 2 –WS 2 in-plane heterostructures journal July 2017
Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides journal March 2019
Nucleation and growth mechanism of 2D SnS 2 by chemical vapor deposition: initial 3D growth followed by 2D lateral growth journal April 2018
Directional Motion of a Graphene Sheet on Graded MoS2–WSe2 Lateral Heterostructures journal March 2019
Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides journal January 2018
Dislocation-driven growth of two-dimensional lateral quantum-well superlattices journal March 2018
Surface Engineering of Two-Dimensional Materials journal June 2018
2D Layered Material-Based van der Waals Heterostructures for Optoelectronics journal January 2018
Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties journal January 2017
Misfit Strain-Induced Buckling for Transition-Metal Dichalcogenide Lateral Heterostructures: A Molecular Dynamics Study journal August 2018
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices journal August 2017

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