Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

Conference · Mon Nov 21 04:00:00 EST 2016

DOI:https://doi.org/10.1109/PVSC.2016.7750294· OSTI ID:1343875

Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

• Research Organization: NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1343875
• Report Number(s): NREL/CP-5K00-67959
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CdTe solar cells
cathodoluminescence
grain boundaries
grain interiors
recombination