Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2
We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1343672
- Report Number(s):
- NREL/CP-5K00-65747
- Journal Information:
- Conference Record of the IEEE Photovoltaic Specialists Conference, Vol. 2016; Conference: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR (United States), 5-10 Jun 2016; ISSN 0160-8371
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films
Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy