High-performance hole-transporting layer-free conventional perovskite/fullerene heterojunction thin-film solar cells

Tsai, Kai-Wei; Chueh, Chu-Chen; Williams, Spencer T.; Wen, Ten-Chin; Jen, Alex K.  Y.

doi:10.1039/c5ta01343g

High-performance hole-transporting layer-free conventional perovskite/fullerene heterojunction thin-film solar cells

Journal Article · Wed Mar 18 00:00:00 EDT 2015 · Journal of Materials Chemistry. A

DOI:https://doi.org/10.1039/c5ta01343g· OSTI ID:1343566

Tsai, Kai-Wei ^[1]; Chueh, Chu-Chen ^[2]; Williams, Spencer T. ^[2]; Wen, Ten-Chin ^[3]; Jen, Alex K. Y. ^[2]

Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering; National Cheng Kung Univ., Tainan City (Taiwan). Dept. of Chemical Engineering; University of Washington
Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering
National Cheng Kung Univ., Tainan City (Taiwan). Dept. of Chemical Engineering

A high-performance hole-transporting layer (HTL)-free conventional perovskite/fullerene heterojunction thin-film PVSC was demonstrated. Here, we revealed that perovskite can modify the work function of ITO, leading to sufficient charge extraction efficiency at the ITO/perovskite interface. Combined with the high conductivity of ITO, a PCE of >11% with a high open-circuit voltage (V_oc) of 1.01 V was achieved.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Office of Naval Research; Asian Office of Aerospace R&D; Boeing-Johnson Foundation; Ministry of Science and Technology; National Science Foundation

Grant/Contract Number:: EE0006710

OSTI ID:: 1343566

Report Number(s):: DOE-UW-Jen--5

Journal Information:: Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Journal Issue: 17 Vol. 3; ISSN JMCAET; ISSN 2050-7488

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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