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Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe $${p}$$ MOSFETs

Journal Article · · IEEE Transactions on Device and Materials Reliability
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  1. Vanderbilt Univ., Nashville, TN (United States). Electrical Engineering and Computer Science Dept.
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  3. Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Electrical Engineering and Computer Science Dept.
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In this paper, we have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (Svd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. Finally, at lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); United States Air Force (USAF). Office of Scientific Research (AFOSR). Air Force Research Lab. (AFRL); Defense Threat Reduction Agency (DTRA) (United States); National Science Foundation (NSF) (United States)
Contributing Organization:
Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
Grant/Contract Number:
FG02-09ER46554
OSTI ID:
1343536
Alternate ID(s):
OSTI ID: 1597796
Journal Information:
IEEE Transactions on Device and Materials Reliability, Journal Name: IEEE Transactions on Device and Materials Reliability Journal Issue: 4 Vol. 16; ISSN 1530-4388
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

Cited By (1)

Low-frequency noise and defects in copper and ruthenium resistors journal May 2019

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Related Subjects

1/f noise
36 MATERIALS SCIENCE
HfO2
NBTI
SiGe
defect energy distribution
oxygen vacancy defects
relaxation-assisted transitions