skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Predicted electronic markers for polytypes of LaOBi S 2 examined via angle-resolved photoemission spectroscopy

Journal Article · · Physical Review B

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1343339
Journal Information:
Physical Review B, Journal Name: Physical Review B Vol. 95 Journal Issue: 7; ISSN 2469-9950
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

References (26)

Generalized Gradient Approximation Made Simple journal October 1996
Observation of anomalous temperature dependence of spectrum on small Fermi surfaces in a BiS 2 -based superconductor journal August 2014
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors journal July 1994
Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes journal October 2015
Colloquium: Topological insulators journal November 2010
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Crystal structure, lattice vibrations, and superconductivity of LaO 1 x F x BiS 2 journal May 2013
Ferroelectric soft phonons, charge density wave instability, and strong electron-phonon coupling in BiS 2 layered superconductors: A first-principles study journal January 2013
Polytypism in LaOBi S 2 -type compounds based on different three-dimensional stacking sequences of two-dimensional Bi S 2 layers journal May 2016
Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization journal June 2015
Comparative ARPES studies of LaO x F 1−x BiS 2 (x = 0.23 and 0.46) journal February 2016
Growth and superconducting properties of F-substituted ROBiS2 (R=La, Ce, Nd) single crystals journal January 2014
Electronic structure of single-crystalline NdO 0.5 F 0.5 BiS 2 studied by angle-resolved photoemission spectroscopy journal July 2014
The Crystal Structure of Superconducting LaO1−x F x BiS2 journal December 2014
Tunable Rashba Effect in Two-Dimensional LaOBiS 2 Films: Ultrathin Candidates for Spin Field Effect Transistors journal October 2013
Electrically tunable multiple Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials journal October 2015
In-plane charge fluctuations in bismuth-sulfide superconductors journal April 2015
Zinc-blende–wurtzite polytypism in semiconductors journal October 1992
The rise of graphene journal March 2007
Hidden spin polarization in inversion-symmetric bulk crystals journal April 2014
Dirac cone protected by non-symmorphic symmetry and three-dimensional Dirac line node in ZrSiS journal May 2016
Superconductivity in Novel BiS 2 -Based Layered Superconductor LaO 1- x F x BiS 2 journal November 2012
Single-layer MoS2 transistors journal January 2011
Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure journal March 1966
Inter-layer interactions and the origin of SiC polytypes journal February 1988