Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector

Liu, Wei; Chen, Yiqiao; Lu, Wentao; Moy, Aaron; Poelker, Matthew; Stutzman, Marcy; Zhang, Shukui

doi:10.1063/1.4972180

Title: Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector

Journal Article · Mon Dec 19 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4972180· OSTI ID:1343296

Liu, Wei ^[1]; Chen, Yiqiao ^[2]; Lu, Wentao ^[2]; Moy, Aaron ^[2]; Poelker, Matthew ^[3]; Stutzman, Marcy ^[3];

^[3]

Chinese Academy of Sciences, Lanzhou (China); Univ. of Chinese Academy of Sciences, Beijing (China); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
SVT Assoc., Inc., Eden Prairie, MN (United States)
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

Photocathodes that provide high polarization and high quantum efficiency (QE) can significantly enhance the physics capabilities of electron accelerators. We report record-level QE from a high-polarization strained GaAs/GaAsP superlattice photocathode fabricated with a Distributed Bragg Reflector (DBR). The DBR photocathode technique enhances the absorption of incident laser light thereby enhancing QE, but as literature suggests, it is very challenging to optimize all of the parameters associated with the fabrication of complicated photocathode structures composed of many distinct layers. Past reports of DBR photocathodes describe high polarization but typically QE of only ~ 1%, which is comparable to QE of high polarization photocathodes grown without a DBR structure. As a result, this work describes a new strained GaAs/GaAsP superlattice DBR photocathode exhibiting polarization of 84% and QE of 6.4%.

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Research Organization:: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-06OR23177; SC0009516

OSTI ID:: 1343296

Alternate ID(s):: OSTI ID: 1336840

Report Number(s):: JLAB-ACC-16-2394; DOE/OR/23177-4016; APPLAB; TRN: US1701128

Journal Information:: Applied Physics Letters, Vol. 109, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 34 works

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Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes Liu, Wei; Chen, Yiqiao; Moy, Aaron AIP Advances, Vol. 8, Issue 7 https://doi.org/10.1063/1.5040593	journal	July 2018
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