Overcoming the Fundamental Bottlenecks to a new world-record silicon solar cell. Final Technical Report

Technical Report · Tue Jan 31 00:00:00 EST 2017

OSTI ID:1341792

Rohatgi, Ajeet ^[1]; Zimbardi, Francesco ^[1]; Rounsaville, Brian ^[1]; Benick, Jan ^[2]; Stradins, Pauls ^[3]; Norman, Andrew ^[3]; Lee, Benjamin ^[3]; Upadhyaya, Ajay ^[1]; Ok, Young-Woo ^[1]; Tao, Yuguo ^[1]; Tam, Andrew ^[1]

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1. Georgia Inst. of Technology, Atlanta, GA (United States)
2. Fraunhofer Inst. for Solar Energy Systems, Freiburg (Germany)
3. National Renewable Energy Lab. (NREL), Golden, CO (United States)

The objective of the work performed within this contract is to reveal the materials and device physics that currently limit the experimental world record efficiency to 25% for single junction Si (2013), and to demonstrate 26.5% efficiency. The starting efficiency for this project was 23.9% in 2013. Four strategies are being combined throughout the project to achieve 26.5% cell efficiency: (1) passivated contacts via tunnel dielectrics, (2) emitter optimization and passivation through dopant profile engineering, (3) enhanced light trapping through development of photonic crystals and (4) base optimization.

• Research Organization: Georgia Institute of Technology, Atlanta, GA (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Contributing Organization: NREL, Fraunhofer ISE
• DOE Contract Number: EE0006336
• OSTI ID: 1341792
• Report Number(s): DOE-GT-6336
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY