Improving the radiation hardness of graphene field effect transistors

Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; Wishart, James F.; Hao, Yufeng; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

doi:10.1063/1.4963782

Improving the radiation hardness of graphene field effect transistors

Journal Article · Tue Oct 11 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4963782· OSTI ID:1341676

Alexandrou, Konstantinos ^[1]; Masurkar, Amrita ^[1]; Edrees, Hassan ^[1]; ^[2]; Hao, Yufeng ^[3]; ^[3]; Hone, James ^[3]; Kymissis, Ioannis ^[1]

Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Chemistry Division
Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF) (United States); Defense Threat Reduction Agency (DTRA) (United States)

Grant/Contract Number:: SC0012704; AC02-98CH10886

OSTI ID:: 1341676

Alternate ID(s):: OSTI ID: 1328601

Report Number(s):: BNL--113404-2017-JA; KC0304030

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 109; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (7)

Radiation tolerance of two-dimensional material-based devices for space applications Vogl, Tobias; Sripathy, Kabilan; Sharma, Ankur arXiv https://doi.org/10.48550/arxiv.1811.10138	text	January 2018
Radiation tolerance of two-dimensional material-based devices for space applications Vogl, Tobias; Sripathy, Kabilan; Sharma, Ankur Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09219-5	journal	March 2019
A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS ₂ monolayer semiconductor Felix, Jorlandio Francisco; da Silva, Arlon Fernandes; da Silva, Sebastião Willam Nanoscale Horizons, Vol. 5, Issue 2 https://doi.org/10.1039/c9nh00414a	journal	January 2020
Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates Cazalas, E.; Hogsed, M. R.; Vangala, S. Applied Physics Letters, Vol. 115, Issue 22 https://doi.org/10.1063/1.5127895	journal	November 2019
Graphene-based saturable absorber and mode-locked laser behaviors under gamma-ray radiation Kim, Dohyun; Park, Nam Hun; Lee, Hyunju Photonics Research, Vol. 7, Issue 7 https://doi.org/10.1364/prj.7.000742	journal	January 2019
Radiation tolerance of two-dimensional material-based devices for space applications Vogl, Tobias; Sripathy, Kabilan; Sharma, Ankur Zenodo https://doi.org/10.5281/zenodo.2584404	text	January 2019
Radiation tolerance of two-dimensional material-based devices for space applications Vogl, Tobias; Sripathy, Kabilan; Sharma, Ankur Zenodo https://doi.org/10.5281/zenodo.2584405	text	January 2019

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