Diamond heteroepitaxial lateral overgrowth
- Michigan State Univ., East Lansing, MI (United States); Michigan State University
- Michigan State Univ., East Lansing, MI (United States)
A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.
- Research Organization:
- Michigan State Univ., East Lansing, MI (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- FG52-08NA28767
- OSTI ID:
- 1341422
- Journal Information:
- MRS Proceedings, Journal Name: MRS Proceedings Vol. 1734; ISSN applab; ISSN 1946-4274
- Publisher:
- Materials Research Society (MRS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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