Interface Structure, Band Alignment, and Built-In Potentials at ${\mathrm{LaFeO}}_3/n\text{-}{\mathrm{SrTiO}}_3$ Heterojunctions

Journal Article · Tue Nov 22 00:00:00 EST 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.117.226802· OSTI ID:1339821

Comes, Ryan; Chambers, Scott

We demonstrate that LaFeO₃/n-SrTiO₃(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and built-in potentials within the LaFeO₃ layer of the same sign. However, heterojunctions with the TiO20-LaO+ interface structure attract electronic charge from the n-STO substrate, whereas those with the SrO0-FeO2-1 interface structure do not. These results suggest that the latter would more effectively facilitate photogenerated electron-hole pair separation than the former, an important result for photoelectrochemical water splitting

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1339821
• Report Number(s): PNNL-SA-119599; PRLTAO; 48341; KC0203020
• Journal Information: Physical Review Letters, Vol. 117, Issue 22; ISSN 0031-9007
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Environmental Molecular Sciences Laboratory