Molecular dynamics simulations of dislocations in TlBr crystals under an electrical field
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
TlBr crystals have superior radiation detection properties; however, their properties degrade in the range of hours to weeks when an operating electrical field is applied. To account for this rapid degradation using the widely-accepted vacancy migration mechanism, the vacancy concentration must be orders of magnitude higher than any conventional estimates. The present work has incorporated a new analytical variable charge model in molecular dynamics (MD) simulations to examine the structural changes of materials under electrical fields. Our simulations indicate that dislocations in TlBr move under electrical fields. As a result, this discovery can lead to new understanding of TlBr aging mechanisms under external fields.
- Research Organization:
- Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Sandia National Laboratories, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1339289
- Report Number(s):
- SAND--2016-1469J; PII: S2059852116005065
- Journal Information:
- MRS Advances, Journal Name: MRS Advances Journal Issue: 35 Vol. 1; ISSN 2059-8521; ISSN applab
- Publisher:
- Materials Research Society (MRS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Molecular dynamics discovery of an extraordinary ionic migration mechanism in dislocation-containing TlBr crystals
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journal | January 2020 |
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Molecular dynamics discovery of an extraordinary ionic migration mechanism in dislocation-containing TlBr crystals