Effect of proton irradiation on superconductivity in optimally doped single crystals
Journal Article
·
· Physical Review B
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Northern Illinois, DeKalb, IL (United States). Dept. of Physics
- Western Michigan Univ., Kalamazoo MI (United States). Dept. of Physics
Irradiation with 4-MeV protons was used to systematically introduce defects in single crystals of the iron- arsenide superconductor BaFe2(As1-xPx)2, x=0.33. The effect of disorder was investigated on the low temperature behavior of the London penetration depth, y(T) and transition temperature, Tc. In near-optimal doped samples with Tc ~ 29 K, signatures of gap with nodes were observed. Our results suggest that the nature of defects created by proton irradiation differs from electron irradiation. Contrary to other reports, we do not see a disorder driven lifting of accidental nodes, and we observe that proton induced defects are weaker pairbreakers than electron induced defects.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Contributing Organization:
- Univ. of Northern Illinois, DeKalb, IL (United States); Western Michigan Univ., Kalamazoo MI (United States)
- Grant/Contract Number:
- AC02-06CH11357; AC05-00OR22725
- OSTI ID:
- 1339258
- Alternate ID(s):
- OSTI ID: 1242597; OSTI ID: 1279437; OSTI ID: 1356851
- Journal Information:
- Physical Review B, Vol. 93, Issue 11; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 16 works
Citation information provided by
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