Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Goldflam, Michael D.; Kadlec, Emil Andrew; Olson, Ben V.; Klem, John F.; Hawkins, Samuel D.; Parameswaran, S.; Coon, Wesley Thomas; Keeler, Gordon Arthur; Fortune, Torben Ray; Tauke-Pedretti, Anna; Wendt, Joel R.; Shaner, Eric A.; Davids, Paul S.; Kim, Jin K.; Peters, David W.

doi:10.1063/1.4972844

Title: Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Journal Article · Thu Dec 22 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4972844· OSTI ID:1338404

Goldflam, Michael D. ^[1]; Kadlec, Emil Andrew ^[1]; Olson, Ben V. ^[1]; Klem, John F. ^[1]; Hawkins, Samuel D. ^[1]; Parameswaran, S. ^[1]; Coon, Wesley Thomas ^[1]; Keeler, Gordon Arthur ^[1]; Fortune, Torben Ray ^[1]; Tauke-Pedretti, Anna ^[1]; Wendt, Joel R. ^[1]; Shaner, Eric A. ^[1]; Davids, Paul S. ^[1]; Kim, Jin K. ^[1]; Peters, David W. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here we examined the spectral responsivity of a 1.77μm thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas. Coupling between the Fabry-Pérot cavity formed by the semiconductor layer and the resonant nanoantennas on its surface enables spectral selectivity, while also increasing peak quantum efficiency to over 50%. Electromagnetic simulations reveal that this high responsivity is a direct result of field-enhancement in the absorber layer, enabling significant absorption in spite of the absorber’s subwavelength thickness. Notably, thinning of the absorbing material could ultimately yield lower photodetector noise through a reduction in dark current while improving photocarrier collection efficiency. The temperature- and incident-angle-independent spectral response observed in these devices allows for operation over a wide range of temperatures and optical systems. This detector paradigm demonstrates potential benefits to device performance with applications throughout the infrared.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000; AC04-94AL85000. SAND NO. 2011-XXXXP

OSTI ID:: 1338404

Alternate ID(s):: OSTI ID: 1364073

Report Number(s):: SAND2016-12919J; 650117; TRN: US1701106

Journal Information:: Applied Physics Letters, Vol. 109, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 34 works

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Ultra-broadband absorber from visible to near-infrared using plasmonic metamaterial Lei, Lei; Li, Shun; Huang, Haixuan Optics Express, Vol. 26, Issue 5 https://doi.org/10.1364/oe.26.005686	journal	January 2018
Tunable Infrared Devices via Ferroelectric Domain Reconfiguration Beechem, Thomas E.; Goldflam, Michael D.; Sinclair, Michael B. Advanced Optical Materials, Vol. 6, Issue 24 https://doi.org/10.1002/adom.201800862	journal	October 2018

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