In situ defect annealing of swift heavy ion irradiated CeO 2 and ThO 2 using synchrotron X-ray diffraction and a hydrothermal diamond anvil cell

Palomares, Raul I.; Tracy, Cameron L.; Zhang, Fuxiang; Park, Changyong; Popov, Dmitry; Trautmann, Christina; Ewing, Rodney C.; Lang, Maik

doi:10.1107/S160057671500477X

In situ defect annealing of swift heavy ion irradiated CeO ₂ and ThO ₂ using synchrotron X-ray diffraction and a hydrothermal diamond anvil cell

Journal Article · Thu Apr 16 00:00:00 EDT 2015 · Journal of Applied Crystallography (Online)

DOI:https://doi.org/10.1107/S160057671500477X· OSTI ID:1338330

Palomares, Raul I. ^[1]; Tracy, Cameron L. ^[2]; Zhang, Fuxiang ^[2]; Park, Changyong ^[3]; Popov, Dmitry ^[3]; Trautmann, Christina ^[4]; Ewing, Rodney C. ^[5]; Lang, Maik ^[6]

Univ. of Tennessee, Knoxville, TN (United States); Carnegie Institution of Washington
Univ. of Michigan, Ann Arbor, MI (United States)
Carnegie Inst. of Washington, Argonne, IL (United States). Geophysical Lab.
Technische Univ. Darmstadt (Germany); GSI-Darmstadt (Germany)
Stanford Univ., CA (United States)
Univ. of Tennessee, Knoxville, TN (United States)

Hydrothermal diamond anvil cells (HDACs) provide facile means for coupling synchrotron Xray techniques with pressure up to 10 GPa and temperature up to 1300 K. This manuscript reports on an application of the HDAC as an ambient-pressure sample environment for performing in situ defect annealing and thermal expansion studies of swift heavy ion irradiated CeO₂ and ThO₂ using synchrotron X-ray diffraction. The advantages of the in situ HDAC technique over conventional annealing methods include: rapid temperature ramping and quench times, high-resolution measurement capability, simultaneous annealing of multiple samples, and prolonged temperature- and apparatus stability at high temperatures. Isochronal annealing between 300 K and 1100 K revealed 2-stage and 1-stage defect recovery processes for irradiated CeO₂ and ThO₂, respectively; indicating that the morphology of the defects produced by swift heavy ion irradiation of these two materials differs significantly. These results suggest that electronic configuration plays a major role in both the radiation-induced defect production and high temperature defect recovery mechanisms of CeO₂ and ThO₂.

View Accepted Manuscript (DOE)

Research Organization:: Carnegie Inst. of Washington, Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Materials Science of Actinides (MSA)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: NA0002006; SC0001089

OSTI ID:: 1338330

Alternate ID(s):: OSTI ID: 1212200

Journal Information:: Journal of Applied Crystallography (Online), Journal Name: Journal of Applied Crystallography (Online) Journal Issue: 3 Vol. 48; ISSN 1600-5767; ISSN JACGAR

Publisher:: International Union of CrystallographyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

Defects induced in cerium dioxide single crystals by electron irradiation Costantini, Jean-Marc; Miro, Sandrine; Touati, Nadia Journal of Applied Physics, Vol. 123, Issue 2 https://doi.org/10.1063/1.5007823	journal	January 2018
Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions Abdullaev, A.; Chauhan, V. S.; Muminov, B. Journal of Applied Physics, Vol. 127, Issue 3 https://doi.org/10.1063/1.5126413	journal	January 2020
Impact of irradiation induced dislocation loops on thermal conductivity in ceramics Khafizov, Marat; Pakarinen, Janne; He, Lingfeng Journal of the American Ceramic Society, Vol. 102, Issue 12 https://doi.org/10.1111/jace.16616	journal	June 2019

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
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