The contribution of 180° domain wall motion to dielectric properties quantified from in situ X-ray diffraction

Fancher, C. M.; Brewer, S.; Chung, C. C.; Röhrig, S.; Rojac, T.; Esteves, G.; Deluca, M.; Bassiri-Gharb, N.; Jones, J. L.

doi:10.1016/j.actamat.2016.12.037

Title: The contribution of 180° domain wall motion to dielectric properties quantified from in situ X-ray diffraction

Journal Article · Wed Mar 01 00:00:00 EST 2017 · Acta Materialia

DOI:https://doi.org/10.1016/j.actamat.2016.12.037· OSTI ID:1338218

Fancher, C. M.; Brewer, S.; Chung, C. C.; Röhrig, S.; Rojac, T.; Esteves, G.; Deluca, M.; Bassiri-Gharb, N.; Jones, J. L.

The contribution of 180° domain wall motion to polarization and dielectric properties of ferroelectric materials has yet to be determined experimentally. In this paper, an approach for estimating the extent of (180°) domain reversal during application of electric fields is presented. We demonstrate this method by determining the contribution of domain reversal to polarization in soft lead zirconate titanate during application of strong electric fields. At the maximum applied field, domain reversal was determined to account for >80% of the measured macroscopic polarization. We also apply the method to quantify the contribution of domain reversal to the weak-field dielectric permittivity of BaTiO₃. The results of this analysis determined that domain reversal accounts for up to ~70% of the macroscopic dielectric permittivity in BaTiO₃. These results demonstrate the predominance of domain reversal to high and low-field dielectric response in ferroelectric polycrystalline materials.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE; National Science Foundation (NSF)

OSTI ID:: 1338218

Journal Information:: Acta Materialia, Vol. 126, Issue C; ISSN 1359-6454

Publisher:: Elsevier

Country of Publication:: United States

Language:: ENGLISH

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On the Origin of the Large Remanent Polarization in La:HfO ₂ Schenk, Tony; Fancher, Chris M.; Park, Min Hyuk Advanced Electronic Materials, Vol. 5, Issue 12 https://doi.org/10.1002/aelm.201900303	journal	September 2019
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