Understanding the bias introduced in quantum dot blinking using change point analysis
- Univ. of California, Berkeley, CA (United States); University of California, Berkeley
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States); Kavli Energy NanoScience Institute, Berkeley, CA (United States)
Quantum dots are semiconductor crystals that are less than 100 nanometers in size; that is, between 1 billionth and 100 billionths of a meter. They can be composed of one semiconductor material or a core of one semiconductor surrounded by a shell of another. The quantum dots studied in this work consisted of a cadmium selenide core surrounded by a cadmium sulfide shell. When a quantum dot is illuminated with light, some of it can be absorbed and excites the quantum dot to a higher energy state. To relax back down to its resting state, light can be emitted in the form of fluorescence. The nature of the fluorescence that is emitted from a single quantum dot differs from that which is emitted from a bulk sample (usually a solid film or a solution of quantum dots). While in bulk samples the fluorescence over time fluctuates randomly about some average, maintaining a continuous average intensity, single quantum dot fluorescence switches between two or more intensities. This phenomenon is referred to as quantum dot blinking, and its origin is of significant relevance to solar cell, light emitting diode and biological tracking applications. Quantum dot blinking can be studied by exciting an isolated quantum dot with light and recording the ensuing fluorescence using sensitive detectors. This is done over many minutes, resulting in a fluorescence intensity (in counts per second) versus time trajectory. These trajectories must be further analyzed in order to understand the nature of the blinking behavior. Conventionally, a bin and threshold analysis is used, whereby the arrival times of fluorescent photons are binned to reduce the signal noise, and a threshold is used to separate the trajectory into periods of high and low fluorescence. In this study, the effects of bin size and threshold on the blinking kinetics were investigated, and the assumption that there is only one bright and one dark state was tested. To do so, a statistically rigorous method called change point analysis was needed which does not require binning and which can determine the number of intensity levels present. Blinking in 17 quantum dots was studied using both analysis methods. The primary parameter that was compared between the two methods is called a truncation time. Increasing the bin size was found to generally lead to a larger truncation time while increasing the threshold always decreased the truncation time. Using the change point analysis method, 12 out of 17 quantum dots were found to exhibit more than two intensity levels. Lastly, the assumption that only two intensity levels exist was found to significantly affect the blinking statistics: when individual levels were combined into one bright level, the truncation time would increase. The change point analysis method was found to be more suitable for studying multilevel blinking in quantum dots than the conventional bin and threshold method, since the effects of binning and thresholding can be alleviated and the two-level assumption relaxed.
- Research Organization:
- Univ. of California, Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1337745
- Alternate ID(s):
- OSTI ID: 1530265
- Report Number(s):
- DOE-LBNL--CH11231
- Journal Information:
- Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 51 Vol. 120; ISSN 1932-7447
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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