Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Understanding the bias introduced in quantum dot blinking using change point analysis

Journal Article · · Journal of Physical Chemistry. C
 [1];  [2];  [3];  [3];  [2]
  1. Univ. of California, Berkeley, CA (United States); University of California, Berkeley
  2. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Univ. of California, Berkeley, CA (United States); Kavli Energy NanoScience Institute, Berkeley, CA (United States)

Quantum dots are semiconductor crystals that are less than 100 nanometers in size; that is, between 1 billionth and 100 billionths of a meter. They can be composed of one semiconductor material or a core of one semiconductor surrounded by a shell of another. The quantum dots studied in this work consisted of a cadmium selenide core surrounded by a cadmium sulfide shell. When a quantum dot is illuminated with light, some of it can be absorbed and excites the quantum dot to a higher energy state. To relax back down to its resting state, light can be emitted in the form of fluorescence. The nature of the fluorescence that is emitted from a single quantum dot differs from that which is emitted from a bulk sample (usually a solid film or a solution of quantum dots). While in bulk samples the fluorescence over time fluctuates randomly about some average, maintaining a continuous average intensity, single quantum dot fluorescence switches between two or more intensities. This phenomenon is referred to as quantum dot blinking, and its origin is of significant relevance to solar cell, light emitting diode and biological tracking applications. Quantum dot blinking can be studied by exciting an isolated quantum dot with light and recording the ensuing fluorescence using sensitive detectors. This is done over many minutes, resulting in a fluorescence intensity (in counts per second) versus time trajectory. These trajectories must be further analyzed in order to understand the nature of the blinking behavior. Conventionally, a bin and threshold analysis is used, whereby the arrival times of fluorescent photons are binned to reduce the signal noise, and a threshold is used to separate the trajectory into periods of high and low fluorescence. In this study, the effects of bin size and threshold on the blinking kinetics were investigated, and the assumption that there is only one bright and one dark state was tested. To do so, a statistically rigorous method called change point analysis was needed which does not require binning and which can determine the number of intensity levels present. Blinking in 17 quantum dots was studied using both analysis methods. The primary parameter that was compared between the two methods is called a truncation time. Increasing the bin size was found to generally lead to a larger truncation time while increasing the threshold always decreased the truncation time. Using the change point analysis method, 12 out of 17 quantum dots were found to exhibit more than two intensity levels. Lastly, the assumption that only two intensity levels exist was found to significantly affect the blinking statistics: when individual levels were combined into one bright level, the truncation time would increase. The change point analysis method was found to be more suitable for studying multilevel blinking in quantum dots than the conventional bin and threshold method, since the effects of binning and thresholding can be alleviated and the two-level assumption relaxed.

Research Organization:
Univ. of California, Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1337745
Alternate ID(s):
OSTI ID: 1530265
Report Number(s):
DOE-LBNL--CH11231
Journal Information:
Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 51 Vol. 120; ISSN 1932-7447
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (25)

Emission Intensity Dependence and Single-Exponential Behavior In Single Colloidal Quantum Dot Fluorescence Lifetimes journal December 2003
Detection of Intensity Change Points in Time-Resolved Single-Molecule Measurements journal January 2005
Continuous Distribution of Emission States from Single CdSe/ZnS Quantum Dots journal April 2006
Facts and Artifacts in the Blinking Statistics of Semiconductor Nanocrystals journal May 2010
Modified Power Law Behavior in Quantum Dot Blinking: A Novel Role for Biexcitons and Auger Ionization journal January 2009
Evidence for the Role of Holes in Blinking: Negative and Oxidized CdSe/CdS Dots journal September 2012
Studying Quantum Dot Blinking through the Addition of an Engineered Inorganic Hole Trap journal May 2013
Autocorrelation Analysis for the Unbiased Determination of Power-Law Exponents in Single-Quantum-Dot Blinking journal January 2015
Exciton−Trion Transitions in Single CdSe–CdS Core–Shell Nanocrystals journal August 2009
Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots journal November 2011
Compact high-quality CdSe–CdS core–shell nanocrystals with narrow emission linewidths and suppressed blinking journal February 2013
Universal emission intermittency in quantum dots, nanorods and nanowires journal July 2008
Charge-tunnelling and self-trapping: common origins for blinking, grey-state emission and photoluminescence enhancement in semiconductor quantum dots journal January 2016
Mechanisms for charge trapping in single semiconductor nanocrystals probed by fluorescence blinking journal January 2013
Probing single-molecule dynamics photon by photon journal December 2002
Characterizing quantum-dot blinking using noise power spectra journal August 2004
Theory of the statistics of kinetic transitions with application to single-molecule enzyme catalysis journal April 2006
Two-state theory of binned photon statistics for a large class of waiting time distributions and its application to quantum dot blinking journal June 2014
Evidence for a diffusion-controlled mechanism for fluorescence blinking of colloidal quantum dots journal August 2007
Blinking statistics in single semiconductor nanocrystal quantum dots journal May 2001
Simple model for the power-law blinking of single semiconductor nanocrystals journal December 2002
Relationship between single quantum-dot intermittency and fluorescence intensity decays from collections of dots journal October 2004
Bright and Grey States in CdSe-CdS Nanocrystals Exhibiting Strongly Reduced Blinking journal March 2009
Model of Fluorescence Intermittency of Single Colloidal Semiconductor Quantum Dots Using Multiple Recombination Centers journal November 2009
Bunching and antibunching in the fluorescence of semiconductor nanocrystals journal January 2001

Cited By (4)

Intermittency of CsPbBr3 Perovskite Quantum Dots Analyzed by an Unbiased Statistical Analysis journal May 2021
Microsecond Blinking Events in the Fluorescence of Colloidal Quantum Dots Revealed by Correlation Analysis on Preselected Photons journal June 2019
A Python toolbox for unbiased statistical analysis of fluorescence intermittency of multi-level emitters preprint January 2021
A White Light-Emitting Quantum Dot Complex for Single Particle Level Interaction with Dopamine Leading to Changes in Color and Blinking Profile journal April 2018

Similar Records

Distortion of power law blinking with binning and thresholding
Journal Article · Fri Mar 21 00:00:00 EDT 2014 · Journal of Chemical Physics · OSTI ID:22253432

Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application
Journal Article · Fri Mar 15 00:00:00 EDT 2013 · Materials Research Bulletin · OSTI ID:22290370