Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Migration processes of the As interstitial in GaAs

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4969049· OSTI ID:1337586

Not Available

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1337586
Alternate ID(s):
OSTI ID: 1349323
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 120; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

Similar Records

Migration Processes of the As Interstitial in GaAs and InGaAs.
Conference · Wed Jun 01 00:00:00 EDT 2016 · OSTI ID:1367779

Density functional theory investigation of N interstitial migration in GaN.
Journal Article · Thu Jun 01 00:00:00 EDT 2006 · OSTI ID:889425

Related Subjects