Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Automated detection of single particle-induced gain degradation in irradiated heterojunction bipolar transistors.

Conference ·
OSTI ID:1336357
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1336357
Report Number(s):
SAND2015-8734C; 615275
Country of Publication:
United States
Language:
English

Similar Records

Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage.
Conference · Sat Jul 01 00:00:00 EDT 2017 · OSTI ID:1507078

Single Ion Displacement Effects in Heterojunction Bipolar Transistors.
Conference · Sun Nov 01 00:00:00 EDT 2015 · OSTI ID:1333251

Single Ion Displacement Effects in Heterojunction Bipolar Transistors.
Conference · Sat Aug 01 00:00:00 EDT 2015 · OSTI ID:1304923

Related Subjects