Single-domain epitaxial silicene on diboride thin films

Fleurence, A.; Gill, T. G.; Friedlein, R.; Sadowski, J. T.; Aoyagi, K.; Copel, M.; Tromp, R. M.; Hirjibehedin, C. F.; Yamada-Takamura, Y.

doi:10.1063/1.4945370

Title: Single-domain epitaxial silicene on diboride thin films

Journal Article · Tue Apr 12 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945370· OSTI ID:1335439

Fleurence, A. ^[1]; Gill, T. G. ^[2]; Friedlein, R. ^[1];

^[3]; Aoyagi, K. ^[1]; Copel, M. ^[4]; Tromp, R. M. ^[5]; Hirjibehedin, C. F. ^[6]; Yamada-Takamura, Y. ^[1]

Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science
Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science; Univ. College London, London (United Kingdom). London Centre for Nanotechnology; niv. College London, London (United Kingdom). Dept. of Chemistry
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH, United Kingdom; Department of Chemistry, UCL, London WC1H 0AJ, United Kingdom; Department of Physics and Astronomy, UCL, London WC1E 6BT, United Kingdom

Epitaxial silicene, which forms spontaneously on ZrB₂(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; 26790005; 26246002; EP/H026622/1; EP/G036675/1

OSTI ID:: 1335439

Report Number(s):: BNL-112106-2016-JA; APPLAB; R&D Project: 16083/16083; KC0403020

Journal Information:: Applied Physics Letters, Vol. 108, Issue 15; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (28)

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Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons Hattori, Ayami; Yada, Keiji; Araidai, Masaaki Journal of Physics: Condensed Matter, Vol. 31, Issue 10 https://doi.org/10.1088/1361-648x/aaf8ce	journal	January 2019
Van der Waals integration of silicene and hexagonal boron nitride Wiggers, F. B.; Fleurence, A.; Aoyagi, K. 2D Materials, Vol. 6, Issue 3 https://doi.org/10.1088/2053-1583/ab0a29	journal	April 2019
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