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III-nitride surface chemistry influence on band offsets of gate oxides on GaN.

Conference ·
OSTI ID:1333787
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1333787
Report Number(s):
SAND2015-10281C; 611778
Country of Publication:
United States
Language:
English

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