Extracting the temperature distribution on a phase-change memory cell during crystallization

Bakan, Gokhan; Gerislioglu, Burak; Dirisaglik, Faruk; Jurado, Zoila; Sullivan, Lindsay; Dana, Aykutlu; Lam, Chung; Gokirmak, Ali; Silva, Helena

doi:10.1063/1.4966168

Title: Extracting the temperature distribution on a phase-change memory cell during crystallization

Journal Article · Tue Oct 25 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4966168· OSTI ID:1329974

^[1];

^[2]; Dirisaglik, Faruk ^[3]; Jurado, Zoila ^[4]; Sullivan, Lindsay ^[4];

^[2]; Lam, Chung ^[5]; Gokirmak, Ali ^[4];

^[4]

Department of Electrical and Electronics Engineering, Antalya International University, Antalya 07190, Turkey, UNAM, Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey, Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
UNAM, Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA, Department of Electrical and Electronics Engineering, Eskisehir Osmangazi University, Eskisehir 26480, Turkey
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC005038

OSTI ID:: 1329974

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 120 Journal Issue: 16; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 42 works

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References (23)

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Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices Bakan, Gokhan; Gokirmak, Ali; Silva, Helena Journal of Applied Physics, Vol. 116, Issue 23 https://doi.org/10.1063/1.4904746	journal	December 2014
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Better memory Greengard, Samuel Communications of the ACM, Vol. 59, Issue 1 https://doi.org/10.1145/2843555	journal	December 2015
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Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming Park, Ki-Tae; Nam, Sangwan; Kim, Daehan IEEE Journal of Solid-State Circuits, Vol. 50, Issue 1 https://doi.org/10.1109/JSSC.2014.2352293	journal	January 2015
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Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements Cil, Kadir; Dirisaglik, Faruk; Adnane, Lhacene IEEE Transactions on Electron Devices, Vol. 60, Issue 1 https://doi.org/10.1109/TED.2012.2228273	journal	January 2013
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