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APT AND TEM CHARACTERIZATIONS OF PRECIPITATES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE

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OSTI ID:1327152

This study aims to characterize precipitates and defect structures in Mg+ ion implanted and high-temperature annealed cubic silicon carbide (3C-SiC).

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1327152
Report Number(s):
PNNL-SA-116093; 49138; AT2030110
Country of Publication:
United States
Language:
English

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