Ultrahard stitching of nanotwinned diamond and cubic boron nitride in C2-BN composite

Liu, Xiaobing; Chen, Xin; Ma, Hong-An; Jia, Xiaopeng; Wu, Jinsong; Yu, Tony; Wang, Yanbin; Guo, Jiangang; Petitgirard, Sylvain; Bina, Craig R.; Jacobsen, Steven D.

doi:10.1038/srep30518

Title: Ultrahard stitching of nanotwinned diamond and cubic boron nitride in C₂-BN composite

Journal Article · Wed Jul 27 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep30518· OSTI ID:1326659

Liu, Xiaobing ^[1]; Chen, Xin ^[1]; Ma, Hong-An ^[2]; Jia, Xiaopeng ^[2]; Wu, Jinsong ^[3]; Yu, Tony ^[4]; Wang, Yanbin ^[4]; Guo, Jiangang ^[5]; Petitgirard, Sylvain ^[6]; Bina, Craig R. ^[1]; Jacobsen, Steven D. ^[1]

Northwestern Univ., Evanston, IL (United States). Dept. of Earth and Planetary Sciences
Jilin Univ., Changchun (China). State Key Lab. of Superhard Materials
Northwestern Univ., Evanston, IL (United States). Atomic and Nanoscale Characterization Experimental (NUANCE) center
Univ. of Chicago, IL (United States). Center for Advanced Radiation Sources (CARS)
Rice Univ., Houston, TX (United States). Lab. for Nanophotonics, Dept. of Physics & Astronomy
Univ. of Bayreuth, Bayreuth (Germany). Bayerisches Geoinstitut

Materials combining the hardness and strength of diamond with the higher thermal stability of cubic boron nitride (cBN) have broad potential value in science and engineering. Reacting nanodiamond with cBN at moderate pressures and high temperatures provides a pathway to such materials. Here we report the fabrication of C_x-BN nanocomposites, measuring up to 10 mm in longest dimension, by reacting nanodiamond with pre-synthesized cBN in a large-volume press. The nanocomposites consist of randomly-oriented diamond and cBN domains stitched together by sp³-hybridized C-B and C-N bonds, leading to p-type semiconductivity. Dislocations near the sutures accommodate lattice mismatch between diamond and cBN. Nanotwinning within both diamond and cBN domains further contributes to a bulk hardness ~50% higher than sintered cBN. We find the nanocomposite of C₂-BN exhibits p-type semiconductivity with low activation energy and high thermal stability, making it a functional,ultrahard substance.

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Research Organization:: Univ. of Chicago, IL (United States). Center for Advanced Radiation Sources (CARS)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); German Research Foundation (DFG)

Grant/Contract Number:: FG02-94ER14466; NA0001974; FG02-99ER45775; DMR-1121262; INST 91/315-1 FUGG; EAR-1128799; AC02-06CH11357; DMR-1411344; DMR-1508577; EAR-1361276

OSTI ID:: 1326659

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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From 2-D to 0-D Boron Nitride Materials, The Next Challenge Stagi, Luigi; Ren, Junkai; Innocenzi, Plinio Materials, Vol. 12, Issue 23 https://doi.org/10.3390/ma12233905	journal	November 2019
Elastic and mechanical softening in boron-doped diamond Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep42921	journal	February 2017

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